Center for Materials for Information Technology
Workshops
Materials for spin transfer torque MRAM
Wednesday, October 15, 2008
Each fall the Center for Materials for Information Technology (MINT) at the University of Alabama hosts a one-day workshop on a topic of current interest to the information storage industry aimed at workshop participants coming from both industry and academia.
This year’s MINT workshop focuses on Materials for spin transfer torque MRAM.
Current List of Speakers
- Eugene Chen, Grandis Inc., Milpitas CA: "Current status and future outlook of STT-RAM technology"
- Jon Slaughter, EverSpin Technologies Inc., Chandler AZ: "Characteristics of Bit Arrays for High-Density Spin-Torque MRAM"
- Mairbek Chshiev, SPINTEC, Grenoble: "Voltage dependence properties of spin transfer torque in epitaxial magnetic tunnel junctions"
- William J. Gallagher, IBM Watson Research Center, Yorktown Heights, NY: "Spin momentum transfer memory in the context of other nonvolatile memories"
- William H. Butler, The University of Alabama, MINT Center, Tuscaloosa AL
- Mark Stiles, NIST, Gaithersburg MD: "Calculation of material parameters for spin transfer torques"
- Eric Fullerton, University of California, San Diego: "Spin torque devices with perpendicular magnetic anisotropy"
- Jiwei Lu, University of Virginia VA: "Novel oxides for STT-RAM"